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Winbond(华邦)

Winbond SDRAM/DDR 系列产品特点:                                                                                                               

•高速度— 1600Mbps的DDR3能迎合需要高速效的数码电视、STB、蓝光播放机和网络设备;
•低功耗 —DDR3(1.5V) 的电压比DDR2(1.8V)低,能减低系统的耗电量;
•工作温度范围宽 - 最新的Q版本工作温度在-40 to +105;
•高品质 - 由于是国内生产与加工,无形中降低了很多成本。广泛应用于数码类以及消费类电子产品中; 
•产线长 - Winbond已拥有全系列的DRAM产品。其中以TSOP-II和FBGA封装的128Mb~256Mb SDRAM、128Mb~512Mb DDR。

 

Winbond SDRAM系列规格参数
Part No. Density Organization Speed Grade Max Freq Voltage Package
W9816G6IB 16M 1Mx16 -6 166 MHz 3.3V±0.3V Packaged in VFBGA 60 balls pitch=0.65mm, using Lead free materials with RoHS compliant
-7 143 MHz 2.7V~3.6V
W9816G6IH 16M 1Mx16 -5 143 MHz 3.3V±0.3V Package in 50-pin, 400 mil TSOP II, using Lead free materials with RoHS compliant
200 MHz
-6/-6I/-6A 166 MHz 3.3V±0.3V
-7/-7I 143 MHz 2.7V~3.6V
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life.
             
Part No. Density Organization Speed Grade Max Freq Voltage Package
W9864G2IH 64M 2Mx32 -5 200 MHz 3.3V±0.3V Packaged in TSOP II 86-pin, using Lead free materials with RoHS compliant
-6/-6I/-6A 166 MHz
-7 143 MHz 2.7V~3.6V
W9864G6IH 64M 4Mx16 -5 200 MHz 3.3V±0.3V Packaged in TSOP II 54-pin, 400 mil using Lead free materials with RoHS compliant
-6/-6I/-6A 166 MHz
-7/-7S 143 MHz 2.7V~3.6V
W9864G6JH 64M 4Mx16 -5 200 MHz 3.3V±0.3V Packaged in TSOP II 54-pin, 400 mil using Lead free materials with RoHS compliant
-6/-6I 166 MHz
-7/-7S 143 MHz 2.7V~3.6V
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life, N= None for new design.
             
Part No. Density Organization Speed Grade Max Freq Voltage Package
W9812G2IH 128M 4Mx32 -6C 166 MHz 3.3V±0.3V Packaged in TSOP II 86-pin, using Lead free materials with RoHS compliant
-6/-6I/-6A 2.7V~3.6V
-75 133 MHz
W9812G2IB 128M 4Mx32 -6/-6I/-6A 166 MHz 2.7V~3.6V Packaged in TFBGA 90 Ball(8x13mm2 ), using Lead free materials with RoHS compliant
-75 133 MHz
W9812G6IH 128M 8Mx16 -5 200 MHz 3.3V±0.3V TSOP II 54-pin, 400 mil using Lead free materials with RoHS compliant
-6/-6C/-6I/-6A 166 MHz
-75 133 MHz
W9812G6JH 128M 8Mx16 -5 200 MHz 3.3V±0.3V TSOP II 54-pin, 400 mil using Lead free with RoHS compliant
-6/-6I 166 MHz
-75 133 MHz
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life.
             
Part No. Density Organization Speed Grade Max Freq Voltage Package
W9825G2DB 256M 8Mx32 -6 166 MHz 3.3V±0.3V TFBGA 90 ball using Pb free with RoHS compliant
-6I 2.7V~3.6V
-75/75I 133 MHz
W9825G6EH 256M 16Mx16 -5 200MHz 3.3V±0.3V Packaged in TSOP II 54-pin, 400 mil - 0.80, using Lead free materials with RoHS compliant
-6/-6I/-6A 166 MHz
-6 133 MHz
-75/75I/75A
W9825G6JH 256M 16Mx16 -5 200MHz 3.3V±0.3V Packaged in TSOP II 54-pin, 400 mil - 0.80, using Lead free materials with RoHS compliant
-6/-6I 166 MHz
-6 133 MHz
-75
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life.
             
Winbond DDR/DDR1系列规格参数
Part No. Density Organization Speed Grade
W9464G6IH 64Mb DDR 4Mx16 4 Banks -4 250 MHz CL3/CL4
-5/-5I 200 MHz CL3
-6/-6I 166 MHz CL2.5
W9464G6JH 64Mb DDR 4Mx16 4 Banks -4 250 MHz CL3/CL4
-5 200 MHz CL3
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life, N=Not recommended for new design.
             
Part No. Density Organization Speed Grade
W9412G6IH 128Mb DDR  8Mx16 4 Banks -4 250 MHz CL3/CL4
-5/-5I 200 MHz CL3
-6/-6I 166 MHz CL2.5
W9412G6JH 128Mb DDR  8Mx16 4 Banks -4 250 MHz CL3/CL4
-5 200 MHz CL3
W9412G2IB 128Mb DDR  4Mx32 4 Banks -4 250 MHz CL3/CL4
-5/-5I 200 MHz CL3
-6/-6I 166 MHz CL2.5
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life, N=Not recommended for new design.
             
Part No. Density Organization Speed Grade
W9712G6JB 256Mb DDR 8Mx16 4 Banks -18 DDR2-1066 2007/7/7
-25/ 25I/25A DDR2-800 5-5-5/6-6-6
-3 DDR2-667 2005/5/5
W9712G8JB 256Mb DDR 16Mx8 4 Banks -18 DDR2-1066 2007/7/7
-25 DDR2-800 5-5-5/6-6-6
-3 DDR2-667 2005/5/5
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life.
             
Part No. Density Organization Speed Grade
W9712G6JB 128Mb DDR2     8Mx16 4 Banks -18 DDR2-1066 2007/7/7
-25/ 25I/25A DDR2-800 5-5-5/6-6-6
-3 DDR2-667 2005/5/5
W9712G8JB 128Mb DDR2     16Mx8 4 Banks -18 DDR2-1066 2007/7/7
-25 DDR2-800 5-5-5/6-6-6
-3 DDR2-667 2005/5/5
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life.
             
Part No. Density Organization Speed Grade CL-tRCD-tRP?
W9725G6JB 256Mb DDR2 16Mx16 4 Banks -18 DDR2-1066 2007/7/7
-25/ 25I/25A DDR2-800 5-5-5/6-6-6
-3 DDR2-667 2005/5/5
W9725G8JB 256Mb DDR2 32Mx8 4 Banks -18 DDR2-1066 2007/7/7
-25/ 25I DDR2-800 5-5-5/6-6-6
-3 DDR2-667 2005/5/5
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life.
             
Part No. Density Organization Speed Grade CL-tRCD-tRP?
W9751G6JB 512Mb DDR2 32Mx16 4 Banks -18 DDR2-1066 2007/7/7
-25/25I DDR2-800 5-5-5/6-6-6
-3 DDR2-667 2005/5/5
W9751G8JB 512Mb DDR2 64Mx8 4 Banks -18 DDR2-1066 2007/7/7
-25/25I DDR2-800 5-5-5/6-6-6
-3 DDR2-667 2005/5/5
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life.
             
Part No. Density Organization Speed Grade CL-tRCD-tRP?
W971GG6JB 1G DDR2 64Mx16 8 Banks -18 DDR2-1066 2006/6/6
-25/25I DDR2-800 2005/5/5
-3 DDR2-667 2005/5/5
W971GG8JB 1G DDR2 128Mx8 8 Banks -18 DDR2-1066 2006/6/6
-25/25I DDR2-800 2005/5/5
-3 DDR2-667 2005/5/5
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life.
             
Part No. Density Organization Speed Grade CL-tRCD-tRP?
W972GG6JB 2G DDR2 128Mx16 8 Banks -18 DDR2-1066 2007/7/7
-25/25I DDR2-800 5-5-5/6-6-6
-3 DDR2-667 2005/5/5
W972GG8JB 2G DDR2 256Mx8 8 Banks -18 DDR2-1066 2007/7/7
-25/25I DDR2-800 5-5-5/6-6-6
-3 DDR2-667 2005/5/5
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life.

 

 


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    Winbond代理商|华邦代理商|华邦Winbond代理商 深圳升邦电子作为台湾【Winbond华邦半导体】在国内的知名Winbond华邦代理商,本着“全力服务客户,为客户创造终生价值”原则。努力创造“资源平台的共享、成就客户、成就公司”的美好前景。 华邦电子创立于1987年9月,今日的华邦主要以专业的内存集成电路公司为定位,主要业务包含产品设计、技术研发、晶圆制造、营销及售后服务,致力以先进的半导体设计及生产技术,提供客户特殊规格的内存解决方案。华邦电子集团以「DRAM产品事业群」、「闪存IC事业群」及「记忆IC制造事业群」三大事业群为核心,不断追求产品与技术的创新,以落实竞争优势。DRAM产品方面,以所擅长的高速度和低功率内存核心设计技术,推出包含Specialty DRAM、以及Pseudo SRAM 和Low Power SDRAM之Mobile RAM系列产品,可广泛应用在消费性(Consumer)、通讯(Communication)、计算机周边(Computer Peripheral)以及车用电子(Automobile)等四大领域,而具双倍数据传输率(Double Data Rate / DDR) Graphics DRAM-GDDR产品,则锁定个人计算机、游戏机和多媒体等应用市场对于高效能和高速度绘图内存解决方案的需求。

    Winbond优势产品系列

    智能卡IC和模块 * 闪存微控制器和射频IC * 传感器 * 微控制器 * 存储器 * 射频(RF) * 电源管理 * 可编程逻辑器件

    为了让尊贵的您相信我们升邦电子所提供的【Winbond华邦半导体】IC系列均为原装正品,我们特作出如下零风险承诺:

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